50v-1000v 1.0a RS1AB thru rs1mb surface mount fast recovery rectifier web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics glass passivated die construction fast recovery time for high efficiency low forward voltage drop and high current capability surge overload rating to 30a peak ideally suited for automated assembly plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: solder plated terminal - solderable per mil-std-202, method 208 polarity: cathode band or cathode notch sma weight: 0.064 grams (approx.) smb weight: 0.093 grams (approx.) mounting position: any marking: type number u n i t s 0 c 0 c - 6 5 t o + 1 7 5 p f n s symbol v o l t s v o l t s v o l t s a m p s a m p s v o l t s v rrm v rms v dc i (av) i fsm v f i r c j 1.0 30 1.3 +175 o ratings at 25 c ambient temperature unless otherwise specified single phase, half wave, 60hz, resistive or inductive load for capacitive load, derate current by 20% t j t rr t stg 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 5.0 100 150 250 500 15 a maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current .0375 0 (9.5mm)lead length at t a =55 c peak forward surge current 8.3ms single half sine- wave superimposed on rated load (jedec method) maximum instantaneoue at 1.0a dc 0 maximum dc reverse current @t a =25 c 0 at rated dc blocking voltage @t a =100 c maximum reverse recovery time typical junction capacitance operating temperature range storage temperature range RS1AB rs1bb rs1db rs1gb rs1jb rs1kb rs1mb notes 1. measured at 1 mhz and applied reverse voltag of 4.0vdc 2. thermal resistance junction to case
ratings and characteristic curves RS1AB thru rs1mb e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 50v-1000v 1.0a RS1AB thru rs1mb surface mount fast recovery rectifier 0 0.4 1 . 2 25 50 75 100 125 150 175 i , average rectified current (a) o t , terminal temperature ( c) fi g . 1 forward current deratin g curve t 0.2 0.6 0.8 1.0 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 i inst antaneous forward current (a) f, v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f t = 25c j i pulse width: 300 s f 0 10 20 30 1 10 100 i , peak forward surge current (a ) fsm number of cycles at 60hz fi g . 3 forward sur g e current deratin g curve single half-sine-wave (jedec method) t = 150c j 50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under test t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . ? ? fi g . 5 reverse recover y time characteristic and test circuit (+) (+) (-) (-) 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 i , instantaneous reverse current (a ) r percent of rated peak reverse voltage (%) fi g .4 t y pical reverse characteristics t = 125 c j t = 25c j
|
